Electronic device

ABSTRACT

An electronic device includes a substrate, a plurality of micro semiconductor structure, a plurality of conductive members, and a non-conductive portion. The substrate has a first surface and a second surface opposite to each other. The micro semiconductor structures are distributed on the first surface of the substrate. The conductive members electrically connect the micro semiconductor structures to the substrate. Each conductive member is defined by an electrode of one of the micro semiconductor structures and a corresponding conductive pad on the substrate. The non-conductive portion is arranged on the first surface of the substrate. The non-conductive portion includes one or more non-conductive members, and the one or more non-conductive members are attached to the corresponding one or more conductive members of the one or more micro conductive structures.

CROSS REFERENCE TO RELATED APPLICATIONS

This Non-provisional application claims priority under 35 U.S.C. §119(a) on Patent Application No(s). 110102694 filed in Taiwan, Republicof China on Jan. 25, 2021, the entire contents of which are herebyincorporated by reference.

BACKGROUND Technology Field

The present disclosure relates to an electronic device and, inparticular, to an electronic device with micro semiconductor structures.

Description of Related Art

Conventionally, the conductive structure can be formed on a targetcircuit substrate by surface mounting technology (SMT) such as solderpaste printing or ball grid array (BGA) technology. However, thesesurface mounting technology cannot be applied to micro electronicdevices with a size of less than 100 microns in accuracy.

In addition, another conventional method is to coat the anisotropicconductive paste (ACP) on the target circuit substrate for forming theconductive structure. However, in order to adapt to the differentdistances between the conductive pads on the target circuit substrate,or in order to adapt to the target circuit substrate with conductivepads of different scales, the anisotropic conductive paste or adhesivewith a higher particle filling rate is usually used. The conductiveparticles are filled inside the paste (thermosetting paste orthermoplastic paste) in a three-dimensional distribution, therebyproviding the conductive function to the conductive pads in the highestprobability. However, only a small part of the conductive particles canprovide the conductive function to the conductive pads on the targetcircuit substrate, and the remaining conductive particles, the mostpart, are sealed in the cured paste above the target circuit substrate.Therefore, the more expensive conductive particles are wasted. Inaddition, for micro LEDs (light emitting diodes), because the sizethereof is quite small (e.g., 50 μm or smaller), it is not suitable toelectrically connect the electrodes with the conventional wire bondingor eutectic bonding apparatus.

Therefore, it is desired to provide a corresponding solution forperforming electrical connection of the micro semiconductor structure inmicron level or smaller.

SUMMARY

The present disclosure provides an electronic device that canelectrically connect the micron level or smaller micro semiconductorstructure(s) to a substrate.

One or more exemplary embodiments of this present disclosure provide anelectronic device, which includes a substrate, a plurality of microsemiconductor structure, a plurality of conductive members, and anon-conductive portion. The substrate has a first surface and a secondsurface opposite to each other. The micro semiconductor structures aredistributed on the first surface of the substrate. The conductivemembers electrically connect the micro semiconductor structures to thesubstrate. Each conductive member is defined by an electrode or one ofelectrodes of the corresponding micro semiconductor structure and acorresponding conductive pad on the substrate. The non-conductiveportion are arranged on the first surface of the substrate. Thenon-conductive portion includes one or more non-conductive members, andthe one or more non-conductive members are attached to the correspondingone or more conductive members of the one or more micro conductivestructures.

In some exemplary embodiments, each conductive member includes a metalmaterial selected from copper, nickel, tin, silver, gallium, gold, andindium, or an alloy or a compound containing one or more of copper,nickel, tin, silver, gallium, gold, and indium.

In some exemplary embodiments, the non-conductive portion includes apolymer with one or more siloxane chains (—Si—O—Si—).

In some exemplary embodiments, the non-conductive portion includes apolymer with one or more epoxy groups (—CH—O—CH—).

In some exemplary embodiments, the non-conductive portion has an epoxyvalue less than 0.25.

In some exemplary embodiments, the non-conductive portion is aphotoresist.

In some exemplary embodiments, one of the non-conductive memberscompletely covers the corresponding one or more conductive members.

In some exemplary embodiments, one of the non-conductive members coversat least a part of the corresponding one or more micro semiconductorstructures.

In some exemplary embodiments, the non-conductive members are separatedand independent from each other.

In some exemplary embodiments, the non-conductive members are connectedto each other.

In some exemplary embodiments, each of the conductive members is definedwith a joint interface between the corresponding electrode and thecorresponding conductive pad, and the top of each non-conductive memberis higher than the joint interface of the one or more conductivemembers.

In some exemplary embodiments, each micro conductive structurecorresponds to two of the conductive members.

In some exemplary embodiments, the height of the conductive member isgreater than or equal to 2 μm and less than or equal to 6 μm.

In some exemplary embodiments, the width of the conductive member isless than or equal to 20 μm.

In some exemplary embodiments, the distance between two conductivemembers corresponding to one of the micro semiconductor structures isless than or equal to 30 μm.

In some exemplary embodiments, each of the micro semiconductorstructures is a micron level or smaller photoelectric die withhorizontal type electrodes, vertical type electrodes, or flip-chip typeelectrodes.

One or more exemplary embodiments of this present disclosure alsoprovide a manufacturing method of an electronic device, comprising thefollowing steps of:

preparing a substrate structure, wherein the substrate structureincludes a substrate, a plurality of micro semiconductor structures, anda plurality of conductive members, and each conductive memberelectrically connects the corresponding micro semiconductor structure tothe substrate.

applying a non-conductive material in a pre-coating pattern on thesubstrate structure, wherein the non-conductive material is a fluid, andthe non-conductive material attaches the conductive members along thesubstrate; and

the non-conductive material forming a non-conductive portion on thesubstrate based on an insulation pattern, wherein the non-conductiveportion includes one or more non-conductive members, one of thenon-conductive members attaches to more than one of the conductivemembers, and the insulation pattern is partially overlapped with thepre-coating pattern.

In some exemplary embodiments, the step of preparing the substratestructure includes: electrically connecting the micro semiconductorstructures to the substrate, wherein the substrate includes a pluralityof conductive pads, one surface of each micro semiconductor structurefacing the substrate has at least one electrode, and each conductivemember is defined by one of the conductive pads and an electrode or oneof electrodes of the corresponding micro semiconductor structure.

In some exemplary embodiments, the step of preparing the substratestructure includes: heat pressing or laser welding one of the conductivepads and the electrode or one of the electrodes of the correspondingsubstrate structure so as to form one of the conductive members.

In some exemplary embodiments, in the step of preparing the substratestructure, each of the conductive members comprises a metal materialselected from copper, nickel, tin, silver, gallium, gold, and indium, oran alloy or a compound containing one or more of copper, nickel, tin,silver, gallium, gold, and indium.

In some exemplary embodiments, in the step of applying thenon-conductive material, one non-conductive material is applied betweenadjacent micro semiconductor structures.

In some exemplary embodiments, in the step of applying thenon-conductive material, the non-conductive materials at applied at thesame time or sequentially.

In some exemplary embodiments, before the step of forming thenon-conductive portion, the manufacturing method further includes:statically placing the substrate structure applied with thenon-conductive material at room temperature for 1 to 24 hrs.

In some exemplary embodiments, before the step of forming thenon-conductive portion, the manufacturing method further includes:statically placing the substrate structure applied with thenon-conductive material at 40 to 80° C. for 0.1 to 4 hrs.

In some exemplary embodiments, in the step of applying thenon-conductive material, the viscosity of the non-conductive material isless than or equal to 3 Pa·s.

In some exemplary embodiments, in the step of applying thenon-conductive material, the non-conductive portion formed from thenon-conductive material includes a plurality of non-conductive members,and each non-conductive member attaches to the conductive member(s) ofthe corresponding micro conductive structure(s).

In some exemplary embodiments, in the step of applying thenon-conductive material, the non-conductive members are separated andindependent from each other.

In some exemplary embodiments, after the step of forming thenon-conductive portion, the manufacturing method further includes:removing residuals of each micro semiconductor structure on thesubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure will become more fully understood from the detaileddescription and accompanying drawings, which are given for illustrationonly, and thus are not limitative of the present disclosure, andwherein:

FIG. 1, FIGS. 1A to 1E and FIG. 2 are schematic diagrams showingelectronic devices according to different embodiments of thisdisclosure;

FIG. 3 and FIGS. 3A to 3C are flow charts of manufacturing methods of anelectronic device according to different embodiments of this disclosure;

FIGS. 4A to 4D are schematic diagrams showing the manufacturingprocedure of FIG. 3;

FIGS. 5 and 6 are schematic diagrams showing the pre-coating pattern andthe insulation pattern on the electronic device, respectively; and

FIGS. 7A to 7C are schematic diagrams showing the manufacturingprocedure of FIG. 3A.

DETAILED DESCRIPTION OF THE DISCLOSURE

The present disclosure will be apparent from the following detaileddescription, which proceeds with reference to the accompanying drawings,wherein the same references relate to the same elements.

The terms used in this disclosure are defined and explained as follow.The term “micro” semiconductor structure and “micro” semiconductordevice are used synonymously and generally refer to the scale ofmicrometers or below. The terms “semiconductor structure” and“semiconductor device” are used synonymously and generally refer to asemiconductor material, die, structure, device, component of device, orsemi-finished product. The term “semiconductor structure” used hereinincludes high-quality monocrystalline semiconductors and polycrystallinesemiconductors, semiconductor materials manufactured throughhigh-temperature processing, doped semiconductor materials, organic andinorganic semiconductors, and composed semiconductor materials andstructures having one or more additional semiconductor components ornon-semiconductor components (e.g. dielectric layers or materials, orconductive layers or materials). The semiconductor components include,for example but are not limited to, transistors, photovoltaic devices(including solar cells), diodes, photodiodes, light-emitting diodes,laser diodes, antennas, integrated circuits, and semiconductor devicesand device assemblies of sensors. In addition, a semiconductor componentmay refer to a component or part of a functional semiconductor device orproduct. The word “substrate” used herein refers to a non-nativesubstrate for receiving the micro semiconductor structures, wherein itcan be an intermediate substrate or a final substrate during themanufacturing process. In some embodiments, the material of the nativesubstrate or the non-native substrate includes high-molecular polymersor non-high-molecular polymers, such as plastic or resin (e.g.,polyethylene naphthalate, polyethylene terephthalate (PET or PETE),polyimide (PI), polyethylene (PE), polyvinyl chloride (PVC), polystyrene(PS), acrylic, fluoropolymer, polyester or nylon), or such as metal,metal foil, semiconductor, ceramic, glass, flexible glass, quartz,sapphire, or silicon-based materials, or such as metal-glass fibercomposite materials, metal-ceramic composite materials, or compositematerials composed of any of the aforementioned materials. In addition,the “substrate” can be configured with an active circuit includingactive components. For example, the active component can be a silicon ICor a thin film transistor (TFT). In other embodiments, the “substrate”can be configured with a passive circuit including none of activecomponents, such as a conductive pattern layer or the likes. The term“electronic device” used herein can be, for example, photoelectricsemiconductor devices or microwave array devices applied to, forexample, display panels, billboards, antenna devices, sensing devices,backlight modules or lighting devices. If the photoelectricsemiconductor device is a display device, it can be a monochrome orfull-color display device.

The specific embodiments of this disclosure are described in detail withreference to related drawings, wherein the same components will bedescribed with the same reference numbers or symbols. The illustrationsof all implementation aspects of the disclosure are merely illustrative,and do not represent the actual sizes or proportions. In addition, thedefinition of the sequence and the relationship between the elements,unless defined in the text, are only for illustration and description.

The following embodiment will be described with reference to FIGS. 1,1A, 1B, and 2. As shown in FIG. 1, an electronic device 100 of thisdisclosure includes a substrate 10, a plurality of micro semiconductorstructure 20, a plurality of conductive members 30, and a non-conductiveportion. The substrate 10 has a first surface F1 and a second surfaceF2, which are opposite to each other. The micro semiconductor structures20 are distributed on the first surface F1 of the substrate 10, and theconductive members 30 are distributed on the first surface F1 of thesubstrate 10. The non-conductive portion includes one or morenon-conductive members 40, and the non-conductive members 40 areseparated and independent from each other. Each conductive member 30 iscomposed of one of electrodes of one corresponding micro semiconductorstructure 20 and a corresponding conductive pad on the substrate 10.Each conductive member 30 has one end E1 connecting to the substrate 10,another end E2 connecting to the micro semiconductor structure 20, and ajoint interface Es between the two ends E1 and E2. Herein, the jointinterface Es indicates the interface between the electrode of the microsemiconductor structure 20 and the conductive pad of the substrate 10.The non-conductive portion are arranged on the first surface F1 of thesubstrate 10, and the one or more non-conductive members 40 are attachedto the corresponding one or more conductive members 30 of the one ormore micro conductive structures 20. In some embodiments, onenon-conductive member 40 is attached to the corresponding conductivemembers 30 of parts or all of the micro conductive structures 20. Insome embodiments, parts of the non-conductive members 40 are attached tothe conductive members 30 of parts or all of the corresponding microconductive structures 20. In some embodiments, the non-conductivemembers 40 are attached to the conductive members 30 of parts or all ofthe micro conductive structures 20. In some embodiments, thenon-conductive member 40 is attached to at least one part of thecorresponding micro conductive structure 20. In some embodiments, thenon-conductive member 40 is at least attached to the joint interface Esof the corresponding conductive member 30.

In this embodiment, the micro semiconductor structure 20 is, forexample, a micro photodiode, and each micro semiconductor structure 20can be a micron level or smaller micro photoelectric die with horizontaltype, vertical type or flip-chip type electrodes. To be understood, thesize of micron level (micrometers, μm) also includes hundreds of μm, 100μm, or less than 100 μm (e.g. 50 μm or 80 μm), and the size of smallerthan micron level may include nanometer level (e.g. 50 nm, 10 nm or 5nm). Each conductive member 30 is a metal material selected from copper,nickel, tin, silver, gallium, gold, and indium, or an alloy or acompound containing one or more of copper, nickel, tin, silver, gallium,gold, and indium. In this embodiment, the non-conductive members 40 areseparated and independent from each other, and the number of thenon-conductive members 40 is in a one-to-one configuration with thenumber of the conductive members 30.

In some embodiments, the micro semiconductor structure 20 and thesubstrate 10 are electrically connected by two conductive members 30. Insome embodiments, the height of each conductive member 30 is greaterthan or equal to 2 μm and less than or equal to 6 μm. For example, theheight of each conductive member 30 can be 2 μm, 3 μm, 4 μm, 5 μm, or 6μm. In some embodiments, the width of the conductive member 30 is lessthan or equal to 20 μm. For example, the width of the conductive member30 can be 3 μm, 5 μm, 8 μm, 15 μm, or 20 μm. In some embodiments, thedistance between two conductive members 30 of one of the microsemiconductor structures 20 is greater than or equal to 3 μm and lessthan or equal to 30 μm. For example, the distance between two conductivemembers 30 can be 3 μm, 5 μm, 8 μm, 10 μm, 15 μm, 20 μm, or 30 μm. Insome embodiments, each of the non-conductive members 40 has a heightgreater than or equal to 0.5 μm. For example, the height of eachnon-conductive element 40 can be 2 μm or 3 μm. In some embodiments, theheight of each non-conductive member 40 can be higher than the distancebetween the joint interface Es and the first surface F1 of the substrate10, but this disclosure is not limited thereto. It can be understoodthat the height of each non-conductive member 40 is measured startingfrom the first surface F1 of the substrate 10.

In some embodiments, at least one of the non-conductive members 40completely covers the corresponding one or more conductive members 30 ofthe corresponding one or more micro semiconductor structures 20. In someembodiments, the diameter of one end of the non-conductive member 40(i.e., the end corresponding to the end E1 or E2) is greater than thediameter of the middle section of the non-conductive member 40 (i.e.,the position corresponding to the joint interface Es). In someembodiments, each non-conductive member 40 includes a polymer with oneor more siloxane chains (—Si—O—Si—). In some embodiments, eachnon-conductive member 40 includes a polymer with one or more epoxygroups (—CH—O—CH—). In some embodiments, each non-conductive member 40has an epoxy value less than 0.25.

In some embodiments, the non-conductive members 40′ and the conductivemembers 30 are in a one-to-many configuration. For example, as shown inFIG. 1A, each micro semiconductor structure 20 and the substrate 10 areelectrically connected by two conductive members 30, and onenon-conductive member 40′ is attached to two conductive members 30 atthe same time (see the electronic device 100′ as shown in FIG. 1A). Inthis case, the non-conductive members 40′ and the micro semiconductorstructures 20 are in a one-to-one configuration. In some embodiments,the non-conductive members 40′ do not fully cover the two conductivemembers 30 of the micro semiconductor structures 20, but this disclosureis not limited thereto.

In some embodiments, the non-conductive members 40″ and the conductivemembers 30 are still in a one-to-many configuration, and thenon-conductive members 40″ and the micro semiconductor structures 20 arealso in a one-to-many configuration (see the electronic device 100″ asshown in FIG. 1B). That is, one non-conductive member 40″ is attached toone of the conductive members 30 in one micro semiconductor structure 20and one of the conductive members 30 in one adjacent micro semiconductorstructure 20. As shown in FIG. 1B, for example, one non-conductivemember 40″ is attached to two conductive members 30 in two adjacentmicro semiconductor structures 20, respectively. In this embodiment, itis not limited whether the non-conductive member 40″ is fully filledbetween the two conductive members 30 of one corresponding microsemiconductor structure 20. For example, one of the non-conductivemembers 40″ is not fully filled between the two conductive members 30 ofone corresponding micro semiconductor structure 20, and another one ofthe non-conductive members 40″ is fully filled between the twoconductive members 30 of another one corresponding micro semiconductorstructure 20.

In some embodiments, regardless of the configuration of thenon-conductive members 40 x and the conductive members 30 and theconfiguration of the non-conductive member 40 x and the microsemiconductor structure 20, the non-conductive member 40 x is furtherattached to the top edge or top surface of the corresponding one or moremicro semiconductor structures 20. In the electronic device 100 x asshown in FIG. 1C, the height of the non-conductive member 40 x is equalto or exceeds the overall height of the micro semiconductor structures20 and the conductive members 30. In another case, the non-conductivemember 40 y is attached to the sidewall of the corresponding microsemiconductor structure 20. In the electronic device 100 y as shown inFIG. 1D, the height of the non-conductive member 40 y does not exceedthe overall height of the micro semiconductor structures 20 and theconductive members 30. In another case, the non-conductive member 40 zis attached to the sidewall of the corresponding conductive member 30.In the electronic device 100 z as shown in FIG. 1E, the height of thenon-conductive member 40 z does not exceed the overall height of theconductive member 30. In some embodiments, the non-conductive member 40is attached to at least the joint interface Es of the correspondingconductive member 30, but this disclosure is not limited thereto.

In addition, the example as shown in FIG. 2 includes two or moreindependent non-conductive members 40″, and each non-conductive member40″ is simultaneously attached to at least one conductive member 30 in aplurality of adjacent micro semiconductor structures 20. In thisembodiment, each non-conductive member 40″ is simultaneously attached tothe conductive members 30 in two adjacent micro semiconductor structures20, and different non-conductive members 40″ can attach differentnumbers of micro semiconductor structures 20. This disclosure is notlimited thereto.

The following embodiment will be described with reference to FIG. 3,FIG. 4A to FIG. 4D, FIG. 5 and FIG. 6. FIG. 3 illustrates themanufacturing method of the electronic device 100. FIG. 4A to FIG. 4Dare schematic diagrams corresponding to the steps as shown in FIG. 3.FIG. 5 represents the pre-coating pattern in the step S2, and FIG. 6represents the insulation pattern in the step S3.

FIG. 3 shows a manufacturing method of an electronic device includingthe steps S1 to S3.

The step S1 is to prepare a substrate structure 300 as shown in FIG. 4B.The substrate structure 300 includes a substrate 10, a plurality ofmicro semiconductor structures 20, and a plurality of conductive members30, and each conductive member 30 electrically connects thecorresponding micro semiconductor structure 20 to the substrate 10. Inthis case, each conductive member 30 has one end E1 connecting to thesubstrate 10, and one end E2 opposite to the end E1 and connecting tothe corresponding micro semiconductor structure 20. The step S1 furtherincludes a step S11 and a step S12.

In the step S11, as shown in FIG. 4A, a plurality of micro semiconductorstructures 20′ are placed on a carrier device 200, and one surface ofthe carrier device 200 arranged with the plurality of microsemiconductor structures 20′ is approaching a substrate 10′. In thiscase, the surface of the micro semiconductor structure 20′ facing thesubstrate 10′ has at least one electrode P20, and the surface of thesubstrate 10′ facing the micro semiconductor structure 20′ has aplurality of conductive pads P10.

In the step S12, the electrodes P20 of the micro semiconductorstructures 20′ are connected to the corresponding conductive pads P10 ofthe substrate 10′ by heat pressing or laser welding so as to form theconductive members 30 as shown in FIG. 4B. The conductive member 30 isdefined with a joint interface Es of the electrode P20 and theconductive pad P10.

As shown in FIG. 4C, the step S2 is to applying a non-conductivematerial 400 on the substrate structure 300, wherein the non-conductivematerial 400 is a fluid, and the non-conductive material 400 attachesthe conductive members 30 along the substrate 10.

In some embodiments, the adhesive force between the non-conductivematerial 400 and the substrate 10 is greater than the cohesive force ofthe non-conductive material 400, but this disclosure is not limitedthereto. In some embodiments, the non-conductive material 400 can be afluid with a viscosity less than or equal to 3 Pa·s. For example, thenon-conductive material 400 can be a fluid with a viscosity less than orequal to 2 Pa·s, or less than or equal to 1 Pa·s. The non-conductivematerial 400 can diffuse on the first surface F1 of the substrate 10 andapproach the adjacent one or more of the micro semiconductor structures20. In some embodiments, the substrate 10 can at least form a polarityon the first surface F1, thereby improving the adhesive force betweenthe non-conductive material 400 and the substrate 10. In addition, sincethe adhesive force between the non-conductive material 400 and theconductive member 30 on the substrate structure 300 is greater than thecohesive force of the non-conductive material 400, the non-conductivematerial 400 can cling to and cover at least a part of the conductivemember 30 due to capillary phenomenon. In some embodiments, thenon-conductive material 400 is attached to at least the joint interfaceEs of the corresponding conductive member 30, but this disclosure is notlimited thereto. In some embodiments, the non-conductive material 400completely covers the conductive member 30. As shown in FIG. 4D, thenon-conductive material 400 covers the corresponding conductive member30 from the end E1 to the end E2.

In some embodiments, the non-conductive material 400 is a polymer withepoxy group (—CH—O—CH—). In some embodiments, the non-conductivematerial 400 has an epoxy value less than 0.25. In some embodiments, thenon-conductive material 400 is a polymer with siloxane chain(—Si—O—Si—).

In this embodiment, the viscosity of the non-conductive material 400 isless than or equal to 3 Pa·s (poise). Furthermore, the non-conductivematerial 400 is a polymer having a viscosity less than or equal to 3Pa·s. In some embodiments, the viscosity of the non-conductive material400 is less than or equal to 2 Pa·s or 1 Pa·s. In some embodiments, eachnon-conductive material 400 has acid resistance.

For easy understanding, in the step of applying the non-conductivematerial 400 on the substrate structure 300 based on the pre-coatingpattern, a plurality of pre-coating patterns for applying thenon-conductive materials can be prepared as shown in FIG. 5, but thisdisclosure is not limited thereto. For example, as shown in FIG. 5, aplurality of micro semiconductor structures on the substrate structure300 are used as a pixel unit P (e.g. a color display device, which isrepresented by dot-and-dash lines), which includes a micron-level redLED die 20R, a micron-level green LED die 20G, and a micron-level blueLED die 20B. Regarding different pixel units P, one non-conductivematerial 400 a can be applied between four adjacent pixel units P.Regarding different pixel units P, one non-conductive material 400 b canbe applied between corners of two adjacent pixel units P. Regardingdifferent pixel units P, one non-conductive material 400 c can beapplied between two adjacent pixel units P along the X axis. Regardingdifferent pixel units P, one non-conductive material 400 d can beapplied between two adjacent pixel units P along the Y axis. In the samepixel unit P, a plurality of non-conductive materials can correspond toand be respectively attached to a plurality of conductive materials (notshown) of the micro semiconductor structure. In some embodiments, thenon-conductive materials can be applied in array, randomly applied,applied in spin, or irregularly applied. In some embodiments, thenon-conductive materials can be applied simultaneously or sequentially.

In the step S3, the non-conductive material 400 forms a non-conductiveportion on the substrate 10 based on an insulation pattern, wherein thenon-conductive portion attaches to the conductive members 30, and theinsulation pattern is partially overlapped with the pre-coating pattern.

In some embodiments, after forming the non-conductive material 400 onthe substrate 10, the manufacturing method further includes: staticallyplacing the substrate structure applied with the non-conductive material400 at room temperature for 1 to 24 hrs., thereby forming theabove-mentioned non-conductive portion. In this case, the roomtemperature can be, for example, 20 to 30° C.

In some embodiments, after forming the non-conductive material 400 onthe substrate 10, the manufacturing method further includes: staticallyplacing the substrate structure applied with the non-conductive material400 at 40 to 80° C. for 0.1 to 4 hrs., thereby forming theabove-mentioned non-conductive portion.

In addition, the non-conductive portion formed by the non-conductivematerial 400 can include one or more non-conductive members 40. Eachnon-conductive member 40 is attached to a corresponding one or more ofthe conductive members 30 of parts or all of the corresponding microsemiconductor structures. For easy understanding, still taking aplurality of pixel units P on the substrate structure 300 as an example,FIG. 6 shows various insulation patterns for forming the non-conductiveportion (non-conductive members) on the substrate structure 300′, butthis disclosure is not limited thereto. For example, in the same pixelunit P, a plurality of non-conductive members 40 can correspond to andbe respectively attached to at least one conductive material of aplurality of micro semiconductor structures. In the same pixel unit P,one non-conductive member 40 a can be correspondingly attached to aplurality of conductive materials of a plurality of micro semiconductorstructure. In different pixel units P, one conductive member 40 b can becorrespondingly attached to a plurality of conductive materials of aplurality of micro semiconductor structures in two adjacent pixel unitsP along the X axis. In different pixel units P, one conductive member 40c can be correspondingly attached to a plurality of conductive materialsof a plurality of micro semiconductor structures in four adjacent pixelunits P. In different pixel units P, one conductive member 40 c, 40 ecan be correspondingly attached to a plurality of conductive materialsof a plurality of micro semiconductor structures in four adjacent pixelunits P, and each conductive member 40 c or 40 e is a continuous(uninterrupted) structure. In different pixel units P, one conductivemember 40 d, 40 f or 40 g can be correspondingly attached to a pluralityof conductive materials of a plurality of micro semiconductor structuresin four adjacent pixel units P. The differences are that the conductivemembers 40 d, 40 f and 40 g have different sizes of vacancies, and eachof them can still be used as one conductive material in this disclosure.

Please refer to FIG. 3A and FIG. 7A to FIG. 7C. FIG. 3A shows the stepsS1 to S4. After each of the micro semiconductor structures 20 on thesubstrate structure 300″ is separated from a substrate (not shown), eachof the micro semiconductor structures 20 still contains a residue 20 r(e.g. Gallium) as shown in FIG. 7A. Therefore, FIG. 3A further includesa step S4 of: removing the residue 20 r.

The method for removing the residue includes: placing the substratestructure 300″ together with the micro semiconductor structures 20 in anacid solution 500 as shown in FIG. 7B; and washing the individual microsemiconductor structures 20 on the substrate structure 300″ by the acidsolution 50 to remove the residue 22 r, thereby forming a substratestructure 300A. Accordingly, the micro semiconductor structure 20 canhave better luminous efficiency. The non-conductive portion(non-conductive members) of the substrate structure 300 can furtherprotect the conductive member 30 from being corroded by the acidsolution. In some embodiments, the acid solution 500 includeshydrochloric acid.

In another aspect, with reference to FIG. 3B, the method for removingresidues includes (step S4 a): placing the substrate structure 300″together with the micro semiconductor structures 20 in a liquidsubstance at a temperature greater than or equal to 30° C.; and removingthe residue 2 r of each micro semiconductor structure 20 on thesubstrate structure 300″. In some embodiments, the liquid substance canbe, for example, water, ethanol or isopropanol.

In another aspect, the step S4 a further includes: providing ultrasonicvibration when the substrate structure 300″ together with the microsemiconductor structure 20 are placed in the liquid substance.

In the embodiment of FIG. 3C, another kind of non-conductive material isused.

The step S1 is still to prepare a substrate structure, wherein thesubstrate structure includes a substrate, a plurality of microsemiconductor structures, and a plurality of conductive members. Thedetails of this step can refer to the above embodiment, so the detaileddescriptions thereof will be omitted.

The step S2 a is to apply a non-conductive material on the substratestructure, wherein the non-conductive material is attached to theconductive members along the substrate, and the non-conductive materialcan climb to at least a part of the conductive member due to capillaryphenomenon. Different from the previous embodiment, the non-conductivematerial of this embodiment is a liquid photoresist material.

The step S3 a is to perform a photolithography process on thenon-conductive material on the substrate structure to form anon-conductive portion according to an insulation pattern. In thisembodiment, the photolithography process can include, for example butnot limited to, steps of soft-baking (pre-baking), exposure (e.g.excimer laser with ultraviolet wavelength), development, and photoresistremoval.

In the following embodiment, another new non-conductive material (notshown) is used.

In this embodiment, the step S1 and the step S3 (step S3 a) can refer tothe above embodiments, so the detailed descriptions thereof will beomitted.

The step S2 a is to apply a non-conductive material on the substratestructure, wherein the non-conductive material is attached to theconductive member along the substrate, and the non-conductive materialcan climb to at least a part of the conductive member due to capillaryphenomenon. Different from the previous embodiments, the non-conductivematerial of this embodiment is a dark coating material. To beunderstood, the non-conductive material of this embodiment can be any ofthe materials mentioned in this disclosure, and is further mixed with alight absorbing substance that absorbs visible light to form a darkcoating material, such as a black coating. Therefore, when theelectronic device is a photoelectric device, the black coating canreduce the influence of external ambient light on the electronic device,so as to improve the contrast effect of the electronic device. To beunderstood, in some embodiments, the non-conductive material of thisembodiment is fully (or nearly fully) coated.

Since the size of the micro semiconductor structures is extremely tiny,the arrangement density thereof can be relatively increased, so that thefabricated electronic device 100 or the substrate structure 300″ appliedto a photoelectric semiconductor device can have a relatively highcomponent density. The disclosure can fabricate the electronic device100 by a simpler manufacturing method, and can protect the conductivemember in a lower cost and higher efficiency method.

To sum up, in the electronic device and the manufacturing method of thesame of this disclosure, the conductive members are formed between themicro semiconductor structure and the substrate (by heat pressing orlaser welding) before applying the non-conductive material, so that thenon-conductive material can adhere and climb to at least a part of theconductive member due to capillary phenomenon. The effects of thisdisclosure are stated as follow (but not limited thereto):

1. The conductive member(s) can be formed between each microsemiconductor structure and the substrate by heat pressing or laserwelding, and the non-conductive material in a fluid state appliedbetween each micro semiconductor structure and the substrate can adhereand climb to at least a part of the aforementioned conductive member dueto capillary phenomenon. Accordingly, not only the manufacturing processis simplified, but also the manufacturing cost is reduced.

2. The conductive member(s) between each micro semiconductor structureand the substrate can be attached by the non-conductive portion toachieve a better stability at least between the conductive member(s) andthe substrate.

3. The conductive particles of, for example, anisotropic conductivepaste or adhesive are not needed, which greatly reduces the cost.

4. The conductive member(s) between each micro semiconductor structureand the substrate can be attached by the non-conductive portion forproviding the acid resistance ability, which is beneficial to protectthe joint interface of the conductive member during the followingpickling process for removing the residues on the micro semiconductorstructures.

5. When using warm water (or neutral substance fluid) to remove theresidues on the micro semiconductor structures, the exposed (if any)joint interface of the conductive member is not damaged, the process isrelatively simple, and the cost is greatly reduced.

6. When the electronic device is a photoelectric device and thenon-conductive material is a dark coating, the influence of externalambient light on the electronic device can be reduced, and the contrasteffect of the electronic device can be further improved.

7. It allows the flexible applications of the ultra-thin, fragile and/ormicro semiconductor structures without causing damage to the microsemiconductor structures themselves.

Although the disclosure has been described with reference to specificembodiments, this description is not meant to be construed in a limitingsense. Various modifications of the disclosed embodiments, as well asalternative embodiments, will be apparent to persons skilled in the art.It is, therefore, contemplated that the appended claims will cover allmodifications that fall within the true scope of the disclosure.

What is claimed is:
 1. An electronic device, comprising: a substratehaving a first surface and a second surface opposite to each other; aplurality of micro semiconductor structures distributed on the firstsurface of the substrate; a plurality of conductive members electricallyconnecting the micro semiconductor structures to the substrate, whereineach of the conductive members is defined by an electrode of one of themicro semiconductor structures and a corresponding conductive pad on thesubstrate, and a non-conductive portion arranged on the first surface ofthe substrate, wherein the non-conductive portion comprises one or morenon-conductive members, and the one or more non-conductive members areattached to the corresponding one or more conductive members of the oneor more micro conductive structures.
 2. The electronic device of claim1, wherein each of the conductive members comprises a metal materialselected from copper, nickel, tin, silver, gallium, gold, and indium, oran alloy or a compound containing one or more of copper, nickel, tin,silver, gallium, gold, and indium.
 3. The electronic device of claim 1,wherein the non-conductive portion comprises a polymer with one or moresiloxane chains (—Si—O—Si—).
 4. The electronic device of claim 1,wherein the non-conductive portion comprises a polymer with one or moreepoxy groups (—CH—O—CH—).
 5. The electronic device of claim 4, whereinthe non-conductive portion has an epoxy value less than 0.25.
 6. Theelectronic device of claim 1, wherein the non-conductive portion is aphotoresist.
 7. The electronic device of claim 1, wherein one of thenon-conductive members completely covers the corresponding one or moreconductive members.
 8. The electronic device of claim 1, wherein one ofthe non-conductive members covers at least a part of the correspondingone or more micro semiconductor structures.
 9. The electronic device ofclaim 1, wherein the non-conductive members are separated andindependent from each other.
 10. The electronic device of claim 1,wherein the non-conductive members are connected to each other.
 11. Theelectronic device of claim 1, wherein each of the conductive members isdefined with a joint interface between the corresponding electrode andthe corresponding conductive pad, and a top of each of thenon-conductive members is higher than the joint interface of the one ormore conductive members.
 12. The electronic device of claim 1, whereineach of the micro conductive structures corresponds to two of theconductive members.
 13. The electronic device of claim 1, wherein aheight of the conductive member is greater than or equal to 2 μm andless than or equal to 6 μm.
 14. The electronic device of claim 1,wherein a width of the conductive member is less than or equal to 20 μm.15. The electronic device of claim 12, wherein a distance between thetwo conductive members corresponding to one of the micro semiconductorstructures is less than or equal to 30 μm.
 16. The electronic device ofclaim 1, wherein each of the micro semiconductor structures is a micronlevel or smaller photoelectric die with horizontal type electrodes,vertical type electrodes, or flip-chip type electrodes.